Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb

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Authors: J. Buckeridge, T. D. Veal, C. R. A. Catlow, D. O. Scanlon

Journal title: Physical Review B

Journal number: 100/3

Journal publisher: APS

Published year: 2019

DOI identifier: 10.1103/physrevb.100.035207

ISSN: 2469-9950