Effect of the Gate Volume on the Performance of Printed Nanosheet Network-Based Transistors

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Authors: Domhnall O’Suilleabhain, Adam G. Kelly, Ruiyuan Tian, Cian Gabbett, Dominik Horvath, Jonathan N. Coleman

Journal title: ACS Applied Electronic Materials

Journal number: 2/7

Journal publisher: ACS

Published year: 2020

Published pages: 2164-2170

DOI identifier: 10.1021/acsaelm.0c00368

ISSN: 2637-6113