C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

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Authors: Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky

Journal title: IEEE Transactions on Circuits and Systems I: Regular Papers

Journal number: Vol. 69, No. 4

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2022

Published pages: pp. 1595-1605

DOI identifier: 10.1109/tcsi.2021.3139736

ISSN: 1549-8328