Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

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Authors: S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff

Journal title: Journal of Applied Physics

Journal number: 125/23

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 234503

DOI identifier: 10.1063/1.5094864

ISSN: 0021-8979