Gradual reset and set characteristics in yttrium oxide based resistive random access memory

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Authors: Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff

Journal title: Semiconductor Science and Technology

Journal number: 34/7

Journal publisher: Institute of Physics Publishing

Published year: 2019

Published pages: 075008

DOI identifier: 10.1088/1361-6641/ab220f

ISSN: 0268-1242