Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

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Authors: Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, Lambert Alff

Journal title: Physical Review Applied

Journal number: 14/3

Journal publisher: American Physical Society

Published year: 2020

DOI identifier: 10.1103/physrevapplied.14.034029

ISSN: 2331-7019