Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μ m at room temperature

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Authors: P. Schmiedeke, A. Thurn, S. Matich, M. Döblinger, J. J. Finley, G. Koblmüller

Journal title: Applied Physics Letters

Journal number: 118/22

Journal publisher: American Institute of Physics

Published year: 2021

Published pages: 221103

DOI identifier: 10.1063/5.0048807

ISSN: 0003-6951