Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)

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Authors: Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini

Journal title: IEEE Trans. Electron Devices

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2016

DOI identifier: 10.1109/TED.2016.2604370

ISSN: 0018-9383