Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM

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Authors: S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini

Journal title: IEEE Trans. Electron Devices

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2016

DOI identifier: 10.1109/TED.2016.2526647

ISSN: 0018-9383