Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)

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Authors: S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini

Journal title: IEEE Electron Device Lett.

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2016

DOI identifier: 10.1109/LED.2016.2600574

ISSN: 0741-3106