SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

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Authors: A. Bricalli, E. Ambrosi, M. Laudato, M. Maestro, R. Rodriguez, D. Ielmini

Journal title: 2016 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2016

Published pages: 4.3.1-4.3.4

DOI identifier: 10.1109/IEDM.2016.7838344

ISBN: 978-1-5090-3902-9