Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

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Authors: Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini

Journal title: IEEE Transactions on Electron Devices

Journal number: 66/9

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 3795-3801

DOI identifier: 10.1109/TED.2019.2928890

ISSN: 0018-9383