Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing

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Authors: W. Wang, A. Bricalli, M. Laudato, E. Ambrosi, E. Covi, D. Ielmini

Journal title: 2018 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2018

Published pages: 40.3.1-40.3.4

DOI identifier: 10.1109/IEDM.2018.8614556

ISBN: 978-1-7281-1987-8