The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

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Authors: Sven Besendörfer, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, Tobias Erlbacher

Journal title: Scientific Reports

Journal number: 10/1

Journal publisher: Nature Publishing Group

Published year: 2020

DOI identifier: 10.1038/s41598-020-73977-2

ISSN: 2045-2322