Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

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Authors: M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub, G. Meneghesso, E. Zanoni

Journal title: Microelectronics Reliability

Journal number: 100-101

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 113461

DOI identifier: 10.1016/j.microrel.2019.113461

ISSN: 0026-2714