The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

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Authors: A. Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot

Journal title: IEEE Transactions on Electron Devices

Journal number: 66/1

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 372-377

DOI identifier: 10.1109/ted.2018.2881325

ISSN: 0018-9383