Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

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Authors: Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub

Journal title: physica status solidi (a)

Journal number: 217/7

Journal publisher: Wiley - V C H Verlag GmbbH & Co.

Published year: 2020

Published pages: 1900687

DOI identifier: 10.1002/pssa.201900687

ISSN: 1862-6300