Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

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Authors: I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso

Journal title: IEEE Transactions on Electron Devices

Journal number: 64/9

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 3734-3739

DOI identifier: 10.1109/TED.2017.2728785

ISSN: 0018-9383