Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

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Authors: Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso

Journal title: Materials Science in Semiconductor Processing

Journal number: 78

Journal publisher: Pergamon Press

Published year: 2018

Published pages: 118-126

DOI identifier: 10.1016/j.mssp.2017.10.009

ISSN: 1369-8001