GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

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Authors: Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

Journal title: Applied Physics Express

Journal number: 11/3

Journal publisher: Japan Soc of Applied Physics

Published year: 2018

Published pages: 034102

DOI identifier: 10.7567/apex.11.034102

ISSN: 1882-0778