On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

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Authors: A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot

Journal title: 2018 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2018

Published pages: 4B.5-1-4B.5-4

DOI identifier: 10.1109/IRPS.2018.8353582

ISBN: 978-1-5386-5479-8