Vertical breakdown of GaN on Si due to V-pits

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher

Journal title: Journal of Applied Physics

Journal number: 127/1

Journal publisher: American Institute of Physics

Published year: 2020

Published pages: 015701

DOI identifier: 10.1063/1.5129248

ISSN: 0021-8979