Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

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Authors: I. Abid, R. Kabouche, F. Medjdoub, S. Besendorfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake

Journal title: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Journal publisher: IEEE

Published year: 2020

Published pages: 310-312

DOI identifier: 10.1109/ispsd46842.2020.9170170

ISBN: 978-1-7281-4836-6