Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

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Authors: S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher

Journal title: AIP Advances

Journal number: 10/4

Journal publisher: American Institute of Physics Inc.

Published year: 2020

Published pages: 045028

DOI identifier: 10.1063/1.5141905

ISSN: 2158-3226