OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

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Authors: E. Canato, M. Meneghini, C. De Santi, F. Masin, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso

Journal title: Microelectronics Reliability

Journal number: 114

Journal publisher: Elsevier BV

Published year: 2020

Published pages: 113841

DOI identifier: 10.1016/j.microrel.2020.113841

ISSN: 0026-2714