The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

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Authors: Georges Pavlidis, Samuel H. Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub, Samuel Graham

Journal title: IEEE Electron Device Letters

Journal number: 40/7

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 1060-1063

DOI identifier: 10.1109/led.2019.2915984

ISSN: 0741-3106