ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

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Authors: E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, G. Meneghesso

Journal title: Microelectronics Reliability

Journal number: 100-101

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 113334

DOI identifier: 10.1016/j.microrel.2019.06.026

ISSN: 0026-2714