Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400°C

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Authors: Giorgos Antoniou, Nathan R. Halcovitch, Marta Mucientes, William I. Milne, Arokia Nathan, Judith L. MacManus-Driscoll, Oleg V. Kolosov, and George Adamopoulos

Journal title: APL Materials

Journal publisher: AIP Publishing

Published year: 2021

DOI identifier: 10.1063/5.0079195

ISSN: 1551-7616