Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

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Authors: Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri, Morteza Fathipour, Adrian M. Ionescu

Journal title: IEEE Journal of the Electron Devices Society

Journal number: 8

Journal publisher: Institute of Electrical and Electronics Engineers Inc.

Published year: 2020

Published pages: 939-947

DOI identifier: 10.1109/jeds.2020.3020976

ISSN: 2168-6734