Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

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Authors: Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Gia V Luong, Qing-Tai Zhao, Siegfried Mantl, Adrian M Ionescu

Journal title: Nanotechnology

Journal number: 29/9

Journal publisher: Institute of Physics Publishing

Published year: 2018

Published pages: 095202

DOI identifier: 10.1088/1361-6528/aaa590

ISSN: 0957-4484