Hysteresis Dynamics in Double-Gated n-Type WSe 2 FETs With High-k Top Gate Dielectric

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Authors: Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu

Journal title: IEEE Journal of the Electron Devices Society

Journal number: 7

Journal publisher: Institute of Electrical and Electronics Engineers Inc.

Published year: 2019

Published pages: 1163-1169

DOI identifier: 10.1109/jeds.2019.2933745

ISSN: 2168-6734