Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

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Authors: Anne S Verhulst, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu

Journal title: IEEE Transactions on Electron Devices

Journal number: 67/1

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

Published pages: 377-382

DOI identifier: 10.1109/ted.2019.2954585

ISSN: 0018-9383