Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

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Authors: Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Gia V. Luong, Qing-Tai Zhao, Siegfried Mantl, Christian C. Enz, Adrian M. Ionescu

Journal title: IEEE Electron Device Letters

Journal number: 38/10

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 1485-1488

DOI identifier: 10.1109/led.2017.2734943

ISSN: 0741-3106