Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

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Authors: Nicolo Oliva, Emanuele A. Casu, Matteo Cavalieri, Adrian M. Ionescu

Journal title: 2018 48th European Solid-State Device Research Conference (ESSDERC)

Journal publisher: IEEE

Published year: 2018

Published pages: 114-117

DOI identifier: 10.1109/essderc.2018.8486867

ISBN: 978-1-5386-5401-9