Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below <tex>$\mathrm{V}_{\text{DD}}=400\text{mV}$</tex>

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Authors: Ali Saeidi, Anne S. Verhulst, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu

Journal title: 2018 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2018

Published pages: 13.4.1-13.4.4

DOI identifier: 10.1109/iedm.2018.8614583

ISBN: 978-1-7281-1987-8