Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

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Authors: Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, and Adrian Mihai Ionescu

Journal title: Applied Physics Letters

Journal number: 10773118

Journal publisher: AIP

Published year: 2021

DOI identifier: 10.1063/5.0052129

ISSN: 1077-3118