Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Xuefei Li; Xinhang Shi; Damiano Marian; David Soriano; Teresa Cusati; Giuseppe Iannaccone; Gianluca Fiori; Qi Guo; Wenjie Zhao; Yanqing Wu

Journal title: Science Advances

Journal number: 3

Journal publisher: American Association for the Advancement of Science

Published year: 2023

DOI identifier: 10.1126/sciadv.ade5706

ISSN: 2375-2548