Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors

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Authors: Ben Saddik, K.; Braña, A. F.; López, N.; García, B. J.; Fernández-Garrido, S.; Electronics and Semiconductors Group (ElySe)

Journal title: Journal of Crystal Growth

Journal number: 2

Journal publisher: Elsevier BV

Published year: 2021

DOI identifier: 10.1016/j.jcrysgro.2021.126242

ISSN: 0022-0248