3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing

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Authors: S. Barraud, M. Ezzadeen, D. Bosch, T. Dubreuil, N. Castellani, V. Meli, J.M. Hartmann, M. Mouhdach, B. Previtali, B. Giraud, J. P. Noel, G. Molas, J.M. Portal, E. Nowak, F. Andrieu

Journal title: 2020 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2020

Published pages: 29.5.1-29.5.4

DOI identifier: 10.1109/iedm13553.2020.9371982

ISBN: 978-1-7281-8888-1