Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories

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Authors: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin

Journal title: Nanotechnology

Journal number: 31/44

Journal publisher: Institute of Physics Publishing

Published year: 2020

Published pages: 445205

DOI identifier: 10.1088/1361-6528/aba6b4

ISSN: 0957-4484