Investigation of resistive switching and transport mechanisms of Al 2 O 3 /TiO 2− x memristors under cryogenic conditions (1.5 K)

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Authors: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin

Journal title: AIP Advances

Journal number: 10/2

Journal publisher: American Institute of Physics Inc.

Published year: 2020

Published pages: 025305

DOI identifier: 10.1063/1.5140994

ISSN: 2158-3226