Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

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Authors: L. Hutin, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, B. Bertrand, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence

Journal title: 2019 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2019

Published pages: 37.7.1-37.7.4

DOI identifier: 10.1109/iedm19573.2019.8993580

ISBN: 978-1-7281-4032-2