Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

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Authors: M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard

Journal title: IEEE Transactions on Electron Devices

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

Published pages: 1-5

DOI identifier: 10.1109/ted.2020.3022607

ISSN: 0018-9383