Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

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Authors: Y.Q. Aguiar, F. Wrobel, S. Guagliardo, J.-L. Autran, P. Leroux, F. Saigné, A.D. Touboul, V. Pouget

Journal title: Microelectronics Reliability

Journal number: 100-101

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 113457

DOI identifier: 10.1016/j.microrel.2019.113457

ISSN: 0026-2714