Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Vihar P. Georgiev, Muhammad M. Mirza, Alexandru-Iustin Dochioiu, Fikru Adamu-Lema, Salvatore M. Amoroso, Ewan Towie, Craig Riddet, Donald A. MacLaren, Asen Asenov, Douglas J. Paul

Journal title: IEEE Transactions on Nanotechnology

Journal number: 16/5

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 727-735

DOI identifier: 10.1109/tnano.2017.2665691

ISSN: 1536-125X