Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Toufik Sadi, Cristina Medina-Bailon, Mihail Nedjalkov, Jaehyun Lee, Oves Badami, Salim Berrada, Hamilton Carrillo-Nunez, Vihar Georgiev, Siegfried Selberherr, Asen Asenov

Journal title: Materials

Journal number: 12/1

Journal publisher: MDPI Open Access Publishing

Published year: 2019

Published pages: 124

DOI identifier: 10.3390/ma12010124

ISSN: 1996-1944