Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

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Authors: Talib Al-Ameri, Vihar P. Georgiev, Fikru-Adamu Lema, Toufik Sadi, Xingsheng Wang, Ewan Towie, Craig Riddet, Craig Alexander, Asen Asenov

Journal title: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2016

Published pages: 213-216

DOI identifier: 10.1109/SISPAD.2016.7605185

ISBN: 978-1-5090-0818-6