Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Vihar P. Georgiev, Muhammad M. Mirza, Alexandru-Iustin Dochioiu, Fikru-Adamu Lema, Slavatore M. Amoroso, Ewan Towie, Craig Riddet, Donald A. MacLaren, Asen Asenov, Douglas J. Paul

Journal title: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

Journal publisher: IEEE

Published year: 2016

Published pages: 1-3

DOI identifier: 10.1109/NMDC.2016.7777084

ISBN: 978-1-5090-4352-1