Forming‑Free and Non‑linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface‑Induced Internal Resistance

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Authors: Mari Napari, Spyros Stathopoulos, Themis Prodromakis & Firman Simanjuntak

Journal title: Electronic Materials Letters

Journal publisher: Springer

Published year: 2024

DOI identifier: 10.1007/s13391-023-00481-w

ISSN: 2093-6788