Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

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Authors: Simanjuntak, Firman Mangasa Panidi, Julianna Talbi, Fayzah Kerrigan, Adam Lazarov, Vlado K. Prodromakis, Themistoklis

Journal title: APL Materials

Journal publisher: AIP

Published year: 2022

DOI identifier: 10.1063/5.0076903

ISSN: 2166-532X